Title :
Relationship between AC stress and DC stress on tunnel oxides
Author :
Zous, N.K. ; Chen, Y.J. ; Chin, C.Y. ; Tsai, W.J. ; Lu, T.C. ; Chen, M.S. ; Lu, W.P. ; Wang, Tahui ; Pan, Samuel C. ; Ku, Joseph ; Chih-Yuan Lu
Author_Institution :
Macronix Int. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the VT roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.
Keywords :
PLD programming; dielectric thin films; electric fields; electron traps; flash memories; hole traps; integrated circuit measurement; integrated circuit reliability; integrated memory circuits; microprogramming; tunnelling; AC stress; DC stress; Fowler-Nordheim tunneling; constant FN stress; dynamic stress; dynamic stress field; erase stress field time-dependence; field-dependent oxide trap generation; flash cell; program and erase cycle; threshold voltage degradation slope; threshold voltage roll up; trap generation; tunnel oxides; Channel hot electron injection; Convergence; Data mining; Degradation; EPROM; Electron traps; Filling; Predictive models; Stress; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345563
