Title :
Thermal instabilities in high current power MOS devices: experimental evidence, electro-thermal simulations and analytical modeling
Author :
Spirito, P. ; Breglio, G. ; Alessandro, V.D. ; Rinaldi, N.
Author_Institution :
Dept. of Electron. Eng., Universita di Napoli, Italy
fDate :
6/24/1905 12:00:00 AM
Abstract :
The phenomenon of the thermal instability presented by some high current power MOS has been intensively investigated, both by experimental means and by numerical simulations. An analytical expression for the positive temperature coefficient of the Drain current has been developed and a model for the thermal instability in transient operation has been proposed. The results explain the main causes of the thermal instability and give some rules to evaluate the possible failure occurrence for a given device.
Keywords :
MIS devices; failure analysis; power semiconductor devices; semiconductor device models; semiconductor device reliability; transients; analytical modeling; drain current; electro-thermal simulations; failure occurrence; high current power MOS devices; numerical simulations; positive temperature coefficient; thermal instabilities; transient operation; MOS devices; Microelectronics;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003144
