Diamond technology for electronics and MEMS: review of status and perspectives

Author

Kohn, E. ; Ebert, W. ; Aleksov, A. ; Denisenko, A. ; Adamschik, M. ; Schmid, P.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

59

Abstract

Diamond has been considered a material with extreme mechanical properties for a long time, but is also a wide bandgap semiconductor, potentially enabling electronic and microsystems device characteristics which are currently out of reach. Recent progress has however allowed verification of many ideal diamond materials properties in devices. Two basic electronic components are discussed (FETs and microswitches), which may be viewed as building blocks for future ultra high power high temperature electronics.

Keywords

diamond; elemental semiconductors; field effect transistors; high-temperature electronics; micromechanical devices; power semiconductor devices; semiconductor switches; technological forecasting; wide band gap semiconductors; C; FET; MEMS; diamond materials properties; diamond materials technology; electronic components; electronic device characteristics; electronics; mechanical properties; microswitch; microsystems device characteristics; ultra high power high temperature electronics; wide bandgap semiconductor; Coatings; Diamond-like carbon; Insulation; Material properties; Micromechanical devices; Plasma temperature; Rough surfaces; Semiconductor materials; Surface roughness; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003149

Filename

1003149