Wave-mixing analysis for THz-signals generation in dc-biased semiconductor optical devices at room temperature

Author

Maldonado-Basilio, Ramón ; Latkowski, Sylwester ; Surre, Frederic ; Landais, Pascal

Author_Institution

Res. Inst. for Networks & Commun. Eng., Dublin City Univ., Dublin, Ireland

fYear

2010

Firstpage

9

Lastpage

10

Abstract

Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A comparison of the optical time-fluctuations measured at their output stresses the importance of a resonant cavity in THz-signals generation from semiconductor optical devices.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser cavity resonators; microwave photonics; multiwave mixing; quantum cascade lasers; semiconductor optical amplifiers; terahertz wave generation; FP semiconductor laser; FROG system; InGaAsP; SOA; THz-signals generation; dc-biased semiconductor optical devices; frequency 370 GHz; optical time fluctuation; output stress; resonant cavity; temperature 293 K to 298 K; wave-mixing analysis; Free electron lasers; Frequency; Optical devices; Optical filters; Optical sensors; Quantum cascade lasers; Semiconductor laser arrays; Semiconductor lasers; Semiconductor optical amplifiers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE

Conference_Location

Majorca

Print_ISBN

978-1-4244-5240-8

Electronic_ISBN

978-1-4244-5241-5

Type

conf

DOI

10.1109/PHOTWTM.2010.5421993

Filename

5421993