• DocumentCode
    1613344
  • Title

    Plausible origin of electromigration lifetime extrapolation difference between wafer level isothermal test and package level constant current test

  • Author

    Wang, C.S. ; Chen, M.J. ; Chang, W.C. ; Ke, W.S. ; Lee, C.F. ; Su, K.C. ; Chou, E.N.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2004
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    Electromigration lifetime, extrapolated from the wafer level isothermal test on a metal line, does not coincide with that from the package level constant current test. The discontinuity of mass flux density in the wafer level isothermal test as the origin of such a difference is identified, based on a temperature profile along the metal line. Once this issue is clarified in advance, improved correlation between both tests can be achieved, and as a result, the wafer level isothermal test is expected to replace the conventional time-consuming package level constant current test.
  • Keywords
    electromigration; extrapolation; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; temperature distribution; electromigration lifetime; extrapolation; interconnects; mass flux density discontinuity; metal line temperature profile; package level constant current test; wafer level isothermal test; Electromigration; Electronic equipment testing; Electronics packaging; Extrapolation; Isothermal processes; Life testing; NIST; Stress; Temperature distribution; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
  • Print_ISBN
    0-7803-8454-7
  • Type

    conf

  • DOI
    10.1109/IPFA.2004.1345581
  • Filename
    1345581