DocumentCode :
1613465
Title :
Electrical properties of field grading materials influenced by the silicon carbide grain size
Author :
Önneby, Carina ; Mårtensson, Eva ; Gafvert, U. ; Gustafsson, Anders ; Palmqvist, Lars
Author_Institution :
ABB Corp. Res., Vasteras, Sweden
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
43
Lastpage :
45
Abstract :
Non-linear field-grading materials are used to avoid stress concentrations in many AC and DC high voltage applications. One way to obtain materials having the desired non-linear characteristics is to use compounds, such as an insulating polymer with a semiconducting filler. A possible filler is silicon carbide (SiC). In this study ethylene-propylene rubber (EPDM) mixtures containing a wide range of SiC particle sizes, from approximately 0.7 to 23 μm, have been used to evaluate variations in resistivity, permittivity and nonlinearity. The material properties have been electrically characterized and analyzed both at low voltage in frequency domain and at high voltage in time domain
Keywords :
electrical resistivity; ethylene-propylene rubber; filled polymers; grain size; particle size; permittivity; semiconductor materials; silicon compounds; SiC; electrical properties; ethylene-propylene rubber; field grading material; insulating polymer; nonlinear characteristics; particle size; permittivity; resistivity; semiconducting filler; silicon carbide grain size; Conductivity; Permittivity; Plastic insulation; Polymers; Rubber; Semiconductivity; Semiconductor materials; Silicon carbide; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
Conference_Location :
Eindhoven
Print_ISBN :
0-7803-6352-3
Type :
conf
DOI :
10.1109/ICSD.2001.955507
Filename :
955507
Link To Document :
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