Design of high-power reverse-conducting gate-commutated thyristors

Author

Kim, E.D. ; Zhang, C.L. ; Kim, S.C. ; Kim, N.K. ; Lu, J.Q. ; Bai, J.B.

Author_Institution

Power Semicond. Res. Group, Korea Electrotechnol. Res. Inst., Changwon, South Korea

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

147

Abstract

Different reverse-conducting gate-commutated thyristor (RC-GCT) structures are considered in this paper. The non-punch-through and punch-through structures were recommended for blocking voltages of 2.5 kV and 4.5 kV, respectively. The photo-masks were designed with respect to the high turn-off capability of the GCT and the monolithic integration of GCT and free wheeling diode (FWD). For a large-diameter RC-GCT device with a high turn-off current capacity, the FWD and GCT were designed at the center region and the outer part of wafer, respectively. Mixed mode simulation results using the ISE-TCAD simulators give turn-on and turn-off waveforms of the considered structures. A modified isolation structure between GCT and FWD is proposed for RC-GCT.

Keywords

isolation technology; masks; photolithography; power semiconductor diodes; semiconductor device models; technology CAD (electronics); thyristors; 2.5 kV; 4.5 kV; FWD; ISE-TCAD simulators; RC-GCT; blocking voltages; mixed mode simulation; modified isolation structure; monolithic GCT/free wheeling diode integration; nonpunch-through structures; photomask design; punch-through structures; reverse-conducting gate-commutated thyristors; thyristor design; turn-off current capability; turn-off waveforms; turn-on waveforms; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003161

Filename

1003161