Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing

The residual mechanical stresses in partial SOI structures generated during wafer bonding processing were simulated using finite element method in this work. By employing the Box-Behnken design for the response surface method, statistical models were established to relate the computational stresses to the structural geometric parameters, including oxide length (and width), oxide thickness and work layer thickness. With these statistical models, the geometrical parameters of the structure could be optimized to effectively reduce the residual mechanical stresses in partial SOI structures.