Title :
Parameters of radiation-induced centers for simulation of irradiated power devices
Author :
Siemieniec, Ralf ; Lutz, Josef ; Südkamp, Winfried ; Herzer, Reinhard
Author_Institution :
Dept. of Solid-State Electron., Technische Hochschule Ilmenau, Germany
fDate :
6/24/1905 12:00:00 AM
Abstract :
Irradiation techniques are widely used for carrier lifetime control, especially in power devices, because of their good reproducibility. Simulation of these devices is however lacking due to missing or incomplete recombination center data, despite the availability of suitable recombination models. In this work, we used center data estimated by DLTS and lifetime measurements for the simulation of electron radiated devices and compare the results with the measured device characteristics.
Keywords :
carrier lifetime; deep level transient spectroscopy; electron beam effects; electron-hole recombination; power semiconductor devices; semiconductor device measurement; semiconductor device models; DLTS; carrier lifetime control; electron radiated devices; irradiated power device simulation; irradiation techniques; lifetime measurements; measured device characteristics; power devices; radiation-induced center parameters; recombination center data; recombination models; reproducibility; Microelectronics;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003168
