Parameters of radiation-induced centers for simulation of irradiated power devices

Author

Siemieniec, Ralf ; Lutz, Josef ; Südkamp, Winfried ; Herzer, Reinhard

Author_Institution

Dept. of Solid-State Electron., Technische Hochschule Ilmenau, Germany

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

177

Abstract

Irradiation techniques are widely used for carrier lifetime control, especially in power devices, because of their good reproducibility. Simulation of these devices is however lacking due to missing or incomplete recombination center data, despite the availability of suitable recombination models. In this work, we used center data estimated by DLTS and lifetime measurements for the simulation of electron radiated devices and compare the results with the measured device characteristics.

Keywords

carrier lifetime; deep level transient spectroscopy; electron beam effects; electron-hole recombination; power semiconductor devices; semiconductor device measurement; semiconductor device models; DLTS; carrier lifetime control; electron radiated devices; irradiated power device simulation; irradiation techniques; lifetime measurements; measured device characteristics; power devices; radiation-induced center parameters; recombination center data; recombination models; reproducibility; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003168

Filename

1003168