• DocumentCode
    1613652
  • Title

    Photoelectron emission from SiO2 surface oxidized on Si wafer

  • Author

    Akagi, Masanobu ; Sakakibara, Takeshi ; Hashimoto, Yuichi

  • Author_Institution
    Chuo Univ., Tokyo, Japan
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    66
  • Lastpage
    68
  • Abstract
    We have experimentally studied the relationship between photoelectron emission and surface current for SiO2 layers on n-type Si. The photothreshold energy of untreated SiO2 increased with increasing surface current from 5.05 to 5.3 eV, keeping a constant value up to about 20 pA of surface current. For the FAB (fast atom bombardment) treated specimen, the photothreshold energy decreased from 5.05 to 4.65 eV with increasing surface current. Such variations might be effected by surface conditions including surface states, surface structure, and electronic conduction in the surface
  • Keywords
    atom-surface impact; atomic force microscopy; photoemission; silicon compounds; surface conductivity; surface states; surface structure; 20 pA; 4.65 to 5.3 eV; Si; Si wafer; SiO2; SiO2 surface; atomic force micrographs; fast atom bombardment; photoelectron emission; photothreshold energy; surface current; surface electronic conduction; surface states; surface structure; Current measurement; Electron emission; Energy measurement; Energy states; Frequency measurement; Rough surfaces; Surface roughness; Surface structures; Surface treatment; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
  • Conference_Location
    Eindhoven
  • Print_ISBN
    0-7803-6352-3
  • Type

    conf

  • DOI
    10.1109/ICSD.2001.955513
  • Filename
    955513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1613652