Investigation of plasma-induced damage of nickel mono-silicide in semiconductor manufacturing

Author

Hsu, P.F. ; Tsai, M.H. ; Perng, B.C. ; Shieh, J.H. ; Tao, H.J. ; Liang, M.S.

Author_Institution

Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co. Ltd., Taiwan

fYear

2004

Firstpage

199

Lastpage

200

Abstract

In this paper, we studied the plasma-induced damage of a nickel mono-silicide (NiSi) using XPS, TEM, AES and SIMS. According to the previous experience, it suggests that NiSi is easily oxidized when O₂ exists in plasma, which results in a high sheet resistance of oxide/silicide (NiSiO_x) mixture. A substrate-dependent oxidation of NiSi formed on the different dose-implanted silicon or poly-silicon substrate was also investigated in this study.

Keywords

Auger electron spectra; X-ray photoelectron spectra; electric resistance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; nickel compounds; oxidation; plasma materials processing; secondary ion mass spectra; sputter etching; transmission electron microscopy; AES; NiSi; NiSi plasma oxidation; NiSiO; O₂; SIMS; Si; TEM; XPS; dose-implanted silicon substrate; high sheet resistance NiSiO_x oxide/silicide mixture; nickel mono-silicide; plasma etch process; plasma-induced damage; poly-silicon substrate; semiconductor manufacturing; substrate-dependent oxidation; Nickel; Oxidation; Plasma applications; Plasma materials processing; Plasma temperature; Semiconductor device manufacture; Silicidation; Silicides; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345593

Filename

1345593