Realization of a fast switching thyristor by local carrier lifetime control

Author

Kim, E.D. ; Zhang, C.L. ; Kim, S.C. ; Zhu, J.Z. ; Yang, B.F.

Author_Institution

Korea Electrotechnol. Res. Inst., Changwon, South Korea

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

193

Abstract

Improvement of switching performance for a thyristor was studied by local carrier lifetime control with help of the HI-13 tandem accelerator in China. The proton irradiation was performed by vertical injection of the energetic particles from cathode side into metallized thyristor devices having a voltage rating of 1,600 V from 34 μm thickness of 60Ω·cm wafer and 200 μm width of N-base drift layer. A superior tradeoff relation between on-state voltage drop And turn-off time could be achieved by reproducible adjustment of a suitable particle energy, 4.7 MeV. Variation of the irradiation energy was found to result in remarkable changes in leakage currents in different modes.

Keywords

carrier lifetime; leakage currents; proton effects; thyristors; 1600 V; 200 micron; 34 micron; 4.7 MeV; 60 ohmcm; HI-13 tandem accelerator; fast switching thyristor; irradiation energy; leakage currents; local carrier lifetime control; metallized thyristor devices; on-state voltage drop; proton irradiation; turn-off time; vertical injection; voltage rating; Cathodes; Charge carrier lifetime; Diodes; Electrons; Metallization; Particle accelerators; Proton accelerators; Silicon; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003172

Filename

1003172