CAD-oriented modeling of low-noise HEMTs

Author

Caddemi, A. ; Martines, G. ; Sannino, M.

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

fYear

1992

Firstpage

1489

Abstract

An automatic measuring system has been developed that performs the simultaneous determination of noise (N), gain, and scattering (S) parameters of microwave transistors through noise figure measurements only. This complete characterization of active devices allows the extraction of accurate circuit models suitable for CAD of monolithic microwave integrated circuit (MMIC), low-noise amplifiers. For eight samples of the high electron mobility transistor (HEMT) 2SK677 by Sony, the comparison between the measured and the modeled N and S parameter sets is reported

Keywords

S-parameters; automatic testing; circuit CAD; electric noise measurement; equivalent circuits; high electron mobility transistors; microwave measurement; semiconductor device models; semiconductor device noise; semiconductor device testing; solid-state microwave devices; 2SK677; ATE; CAD-oriented modeling; LNA; MMIC; N-parameters; automatic measuring system; circuit models; high electron mobility transistor; low-noise HEMTs; low-noise amplifiers; microwave transistors; monolithic microwave integrated circuit; noise figure measurements; scattering parameters; Gain measurement; HEMTs; Integrated circuit measurements; Integrated circuit modeling; MODFETs; Microwave devices; Microwave measurements; Noise figure; Noise measurement; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on

Conference_Location

Washington, DC

Print_ISBN

0-7803-0510-8

Type

conf

DOI

10.1109/MWSCAS.1992.271012

Filename

271012