DocumentCode :
161403
Title :
Hybrid III-V/silicon tunable laser directly modulated at 10Gbit/s for short reach/access networks
Author :
Levaufre, G. ; Le Liepvre, A. ; Jany, C. ; Accard, A. ; Kaspar, P. ; Brenot, Romain ; Make, Dalila ; Lelarge, F. ; Duan, Guang-Hua ; Olivier, S. ; Malhouitre, S. ; Kopp, C. ; Simon, Gael ; Saliou, Fabienne ; Chanclou, Philippe
Author_Institution :
III-V Lab., Alcatel-Thales, Palaiseau, France
fYear :
2014
fDate :
21-25 Sept. 2014
Firstpage :
1
Lastpage :
3
Abstract :
We achieve 10Gbit/s transmissions using NRZ direct modulation on a hybrid III-V on Silicon laser. The device is fabricated by wafer-scale molecular bonding and exhibits a bit error rate less than 10-4 up to 40km reach and a wavelength tunability over 35nm.
Keywords :
III-V semiconductors; elemental semiconductors; optical fibre subscriber loops; optical modulation; semiconductor lasers; silicon; wafer bonding; NRZ direct modulation; Si; bit error rate; bit rate 10 Gbit/s; hybrid III-V-silicon tunable laser; short reach-access networks; wafer-scale molecular bonding; wavelength tunability; Optical attenuators; Optical filters; Optical ring resonators; Optical waveguides; Ring lasers; Silicon; Waveguide lasers; Direct modulation; Hybrid III-V/Si laser; Silicon-on-insulator (SOI) technology; Tunable lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication (ECOC), 2014 European Conference on
Conference_Location :
Cannes
Type :
conf
DOI :
10.1109/ECOC.2014.6964066
Filename :
6964066
Link To Document :
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