DocumentCode
1614198
Title
Sub-threshold swing degradation due to localized charge storage in SONOS memories
Author
Tomar, Bhawna ; Rao, Valipe Ramgopal
Author_Institution
Indian Inst. of Technol., Mumbai, India
fYear
2004
Firstpage
251
Lastpage
253
Abstract
This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.
Keywords
capacitance; circuit simulation; dielectric thin films; integrated circuit modelling; integrated memory circuits; random-access storage; SONOS memories; Si-SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si; electric field line fringing; gate-to-substrate capacitance; localized charge storage; potential contours; silicon-oxide-nitride-oxide-silicon nonvolatile memory cells; sub-threshold swing degradation; threshold voltage; Capacitance; Degradation; Leakage current; Nonvolatile memory; Physics; Power dissipation; Random access memory; SONOS devices; Semiconductor memory; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Conference_Location
Taiwan
Print_ISBN
0-7803-8454-7
Type
conf
DOI
10.1109/IPFA.2004.1345613
Filename
1345613
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