Quantum well intermixing for optoelectronic device integration

Author

Buda, M. ; Deenapanray, P.N.K. ; Fu, L. ; Tan, H.H. ; Reece, P. ; Dao, L.V. ; Gal, M. ; Jagadish, C.

Author_Institution

Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

279

Abstract

This paper reviews recent results on impurity free intermixing of GaAs/AlGaAs quantum wells and application of this technique for integration of optoelectronic devices. Silicon dioxide layers created by plasma enhanced chemical vapour deposition and spin on glass layers were used in this study to create interdiffusion. An integrated device of a laser and a waveguide has been demonstrated.

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; diffusion barriers; gallium arsenide; integrated optoelectronics; optical waveguides; plasma CVD; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum wells; SiO₂; enhanced chemical vapour deposition; impurity free intermixing; integrated laser/waveguide device; interdiffusion; optoelectronic device integration; quantum well intermixing; silicon dioxide layers; spin on glass layers; Chemical vapor deposition; Gallium arsenide; Glass; Impurities; Optoelectronic devices; Plasma applications; Plasma chemistry; Plasma devices; Plasma waves; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003193

Filename

1003193