DocumentCode
1614290
Title
Distributed class-F/inverse class-F circuit considering up to arbitrary harmonics with parasitics compensation
Author
Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution
Univ. of Electro-Commun., Tokyo, Japan
fYear
2011
Firstpage
29
Lastpage
32
Abstract
Class-F and inverse class-F load circuits that can be treated up to arbitrary harmonics have been presented. The class-F and inverse class-F load circuits are designed so that influence of parasitic elements at a transistor is compensated. By using distributed circuit elements, the class-F and inverse class-F amplifier can operate at C-band. The design method mainly for the inverse class-F load circuit is described. Using ideal transmission line model, a designed inverse class-F considering up to the fifth order harmonics exhibits power added efficiency of about 80% in simulation.
Keywords
microwave power amplifiers; microwave transistors; C-band; arbitrary harmonics; distributed circuit elements; distributed class-F circuit; inverse class-F amplifier; inverse class-F load circuits; microwave transistor; parasitic elements; HEMTs; Harmonic analysis; Impedance; Integrated circuit modeling; Load modeling; Power transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International
Conference_Location
Uji, Kyoto
ISSN
2157-362X
Print_ISBN
978-1-61284-214-1
Type
conf
DOI
10.1109/IMWS.2011.5877084
Filename
5877084
Link To Document