• DocumentCode
    1614290
  • Title

    Distributed class-F/inverse class-F circuit considering up to arbitrary harmonics with parasitics compensation

  • Author

    Ishikawa, Ryo ; Honjo, Kazuhiko

  • Author_Institution
    Univ. of Electro-Commun., Tokyo, Japan
  • fYear
    2011
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    Class-F and inverse class-F load circuits that can be treated up to arbitrary harmonics have been presented. The class-F and inverse class-F load circuits are designed so that influence of parasitic elements at a transistor is compensated. By using distributed circuit elements, the class-F and inverse class-F amplifier can operate at C-band. The design method mainly for the inverse class-F load circuit is described. Using ideal transmission line model, a designed inverse class-F considering up to the fifth order harmonics exhibits power added efficiency of about 80% in simulation.
  • Keywords
    microwave power amplifiers; microwave transistors; C-band; arbitrary harmonics; distributed circuit elements; distributed class-F circuit; inverse class-F amplifier; inverse class-F load circuits; microwave transistor; parasitic elements; HEMTs; Harmonic analysis; Impedance; Integrated circuit modeling; Load modeling; Power transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International
  • Conference_Location
    Uji, Kyoto
  • ISSN
    2157-362X
  • Print_ISBN
    978-1-61284-214-1
  • Type

    conf

  • DOI
    10.1109/IMWS.2011.5877084
  • Filename
    5877084