Title :
Power transmission through insulating plate using open-ring resonator coupling and GaN Schottky diode
Author :
Harauchi, Kenji ; Iwasaki, Yuichi ; Abe, Mami ; Ao, Jin-Ping ; Shinohara, Naoki ; Tonomura, Hiroshi ; Ohno, Yasuo
Author_Institution :
Inst. of Technol. & Sci., Univ. of Tokushima, Tokushima, Japan
Abstract :
Open-ring resonator coupling is used for the wireless power transmission through 1.6 mm thick epoxy-glass plate. Microwave signal is emitted from one circuit board where an open-ring resonator is placed and the signal is received by another board with also an open-ring resonator and GaN Schottky barrier diode. At 2.3 GHz, RF to DC conversion efficiency of 37.1% is obtained at the input power of 3.01 W and the output voltage of 8.75 V.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; UHF resonators; epoxy insulation; gallium compounds; microwave power transmission; wide band gap semiconductors; GaN; GaN Schottky barrier diode; circuit board; epoxy-glass plate; frequency 2.3 GHz; insulating plate; microwave signal; open-ring resonator coupling; size 1.6 mm; wireless power transmission; Gallium nitride; Microwave FET integrated circuits; Microwave integrated circuits; Power transmission; Rectennas; Schottky diodes; Wireless communication; GaN Schottky diode; Open-ring resonator; microwave; rectenna; wireless power transmission;
Conference_Titel :
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International
Conference_Location :
Uji, Kyoto
Print_ISBN :
978-1-61284-214-1
DOI :
10.1109/IMWS.2011.5877085
