Title :
Control of turn-on voltage in GaN Schottky barrier diode using Zr/Al/Mo/Au metal stack
Author :
Tokuda, H. ; Watanabe, F. ; Syahiman, A. ; Kuzuhara, M. ; Fujiwara, T.
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
A GaN Schottky diode using Zr/Al/Mo/Au metal stack for Schottky contact has been newly developed. Turn-on (Von) and breakdown voltages (Vbr) are controllable with varying the annealing temperature. The fabricated diode shows the values Von, series resistance (Rs), capacitance (C0), and Vbr to be 0.42 V, 4.2 Ω, 1.0 pF, and 24 V, respectively. These values indicate that 85% conversion efficiency is expected at 5.8 GHz in the rectenna circuit.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium alloys; annealing; gallium compounds; gold alloys; molybdenum alloys; semiconductor device breakdown; wide band gap semiconductors; zirconium alloys; GaN; Schottky barrier diode; Zr-Al-Mo-Au; annealing temperature; breakdown voltages; capacitance; capacitance 1.0 pF; conversion efficiency; rectenna circuit; resistance 4.2 ohm; series resistance; turn-on voltage; voltage 0.42 V; voltage 24 V; Annealing; Gallium nitride; Gold; Rectennas; Schottky diodes; Temperature dependence; Conversion efficiency; Schottky barrier diode; gallium nitride; rectenna;
Conference_Titel :
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International
Conference_Location :
Uji, Kyoto
Print_ISBN :
978-1-61284-214-1
DOI :
10.1109/IMWS.2011.5877086
