New advanced polaritonic photodetector on base of surface barrier structure

Author

Dmitruk, N.L. ; Mayeva, O.I. ; Mamykin, S.V. ; Mamontova, I.B. ; Min´ko, V.I. ; Yastrubchak, O.B.

Author_Institution

Inst. for Phys. of Semicond., Acad. of Sci., Kiev, Ukraine

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

313

Abstract

The paper is devoted to elaboration of an advanced polaritonic photodetector based on the metal (Au or Al)/semiconductor (GaAs or InP) surface barrier heterostructures (SBH). A basic principle underlying the device operation is surface plasmon resonance (SPR) in a SBH with the microrelief (quasigrating, grating and bigrating) at the interface. Influence of the microstructure of continuous metal films and of island films on the efficiency of photodetectors is also investigated.

Keywords

III-V semiconductors; aluminium; diffraction gratings; discontinuous metallic thin films; gallium arsenide; gold; indium compounds; photodetectors; polaritons; semiconductor device metallisation; semiconductor heterojunctions; surface plasmons; Al-GaAs; Al/GaAs surface barrier heterostructure; Au-GaAs; Au-InP; Au/GaAs surface barrier heterostructures; Au/InP surface barrier heterostructures; SPR; bigrating; continuous metal film microstructure; grating; island metal film microstructure; metal/semiconductor surface barrier heterostructures; microrelief; photodetector efficiency; polaritonic photodetector; quasigrating; surface barrier structure; surface plasmon resonance; Etching; Holography; Indium phosphide; Optical surface waves; Photodetectors; Resonance; Rough surfaces; Stability; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003200

Filename

1003200