Title :
25Gb/s normal incident Ge/Si avalanche photodiode
Author :
Mengyuan Huang ; Tuo Shi ; Pengfei Cai ; Liangbo Wang ; Su Li ; Wang Chen ; Ching-yin Hong ; Dong Pan
Author_Institution :
SiFotonics Technol. Co., Ltd., Woburn, MA, USA
Abstract :
We developed world first 25Gb/s normal incident germanium silicon avalanche photodiode (Ge/Si APD) in a CMOS commercial foundry. The vertically illuminated Ge/Si APDs have a large 3-dB bandwidth (>18GHz) at a high gain (M=8) which is suitable for 100GBASE-ER4 application.
Keywords :
CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; germanium; silicon; 100GBASE-ER4 application; CMOS commercial foundry; Ge-Si; bit rate 25 Gbit/s; normal incident Ge/Si avalanche photodiode; vertically illuminated APD; Avalanche photodiodes; Bandwidth; Dark current; Germanium; Silicon; Temperature; Temperature measurement;
Conference_Titel :
Optical Communication (ECOC), 2014 European Conference on
Conference_Location :
Cannes
DOI :
10.1109/ECOC.2014.6964088
