Title :
Non-linear interaction of space charge waves in GaAs semiconductor
Author :
Grimalsky, V.V. ; Escobedo-Alatorre, J. ; Tecpoyotl-Torres, M. ; Koshevaya, S.V.
Author_Institution :
Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
fDate :
6/24/1905 12:00:00 AM
Abstract :
This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value Ecrit, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E⩾Ecrit. Under these conditions, the electron velocity is a function of the electric field given by E=E0+E˜, where Eo is the constant part and E˜ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell´s equations and the velocity function
Keywords :
III-V semiconductors; Maxwell equations; carrier mobility; gallium arsenide; negative resistance; space charge waves; space-charge-limited conduction; GaAs; Maxwell equations; critical field value; external electric field; linear instabilities; mobility sign changes; negative mobility; nonlinear instabilities; nonlinear interaction; semiconductor; space charge waves; Batteries; Dielectrics; Electron mobility; Frequency; Gallium arsenide; Maxwell equations; Nonlinear equations; Semiconductor process modeling; Space charge; Substrates;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003203