γ-radiation dosimeter using the optical and electrical properties of Al/S/CuPc/Al thin films

Author

Arshak, A. ; Zleetni, S.M. ; Arshak, K. ; Harris, J.

Author_Institution

Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

349

Lastpage

352

Abstract

Thermally evaporated thin film pn-junctions with a metal/sulfur/copperphthalocyanine/ metal structure were fabricated and the effects of γ-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The optical band gap showed slight changes in value when irradiated. The as-deposited and irradiated Al/S/CuPc/Al devices demonstrated Zener diode breakdown under reverse bias voltage and a space-charge-limited conduction mechanism under forward bias. The absorbance, the density of colour centre and Zener breakdown current exhibited a highly consistent linear response to γ-radiation exposure. However, the best fit for the experimental data was obtained using the Zener breakdown current for γ-ray dose assessment

Keywords

Zener diodes; aluminium; colour centres; dosimeters; energy gap; gamma-ray detection; metal-semiconductor-metal structures; optical constants; organic semiconductors; p-n junctions; radiation monitoring; space-charge-limited conduction; sulphur; γ-radiation dosimeter; Al/S/CuPc/Al thin films; Zener diode; colour centre; copper-phthalocyanine; electrical properties; highly consistent linear response; optical band gap; optical properties; reverse bias voltage; space-charge-limited conduction mechanism; thermally evaporated thin film pn-junctions; Breakdown voltage; Diodes; Dosimetry; Electromagnetic wave absorption; Electrons; Optical films; Orbits; Sputtering; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003208

Filename

1003208