Title :
Influence of photoperturbation on the characterization accuracy of scanning capacitance microscopy [MOSFET example]
Author :
Chang, M.N. ; Chen, C.Y. ; Wan, W.W. ; Liang, J.H.
Author_Institution :
Dept. of Mater. Characterization & High Frequency Technol., Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
Due to the photoperturbation induced by the atomic force microscopy laser beam, typical scanning capacitance microscopy (SCM) may produce false differential capacitance images of carrier distribution and electrical junctions. For a real MOS device, the photoperturbation can lead to a broadened source/drain region and narrower effective channel length (Leff). The photoperturbation also leads to many difficulties in employing SCM to investigate the influence of annealing processes on electrical junctions. It is revealed that the photoperturbation-induced errors in the measurements of Leff and electrical junction width may be up to 11.2% and 50%, respectively.
Keywords :
MOSFET; atomic force microscopy; carrier density; doping profiles; measurement errors; perturbation theory; semiconductor device measurement; 2D carrier concentration profiles; AFM; MOS devices; MOSFET; SCM; annealing processes; atomic force microscope; broadened source/drain region; capacitance sensor; carrier distribution; differential capacitance images; effective channel length; electrical junctions; laser beam induced photoperturbation; photoperturbation-induced measurement errors; scanning capacitance microscopy; Annealing; Atomic beams; Atomic force microscopy; Capacitance; Capacitive sensors; Laser beams; MOSFETs; Silicon; Surface emitting lasers; Surface topography;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345632
