Novel IR-OBIRCH application in gate oxide failure analysis

Author

Yang, H.W. ; Lee, B.H. ; Hwang, R.L. ; Chu, L.H. ; Su, David

Author_Institution

Process Failure Anal. Dept., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2004

Firstpage

299

Lastpage

302

Abstract

Emission microscopy (EMMI) is commonly used for fault isolation of gate oxide (gox) failures but often fails when the defect has infrared (IR) emission. Infrared optical beam induced resistance change (IR-OBIRCH) is introduced to do fault isolation of gox failures emitting in the infrared range. Compared to liquid crystal (LC) and fluorescent microthermal imaging (FMI), this technique is an easy method to obtain the location of IR emitting gox failures with high spatial resolution.

Keywords

OBIC; dielectric thin films; electric breakdown; failure analysis; fault location; integrated circuit reliability; integrated circuit testing; optical microscopy; EMMI; IR-OBIRCH application; IR-emitting gox failures; defect infrared emission; emission microscopy; fault isolation; fluorescent microthermal imaging; gate oxide failure analysis; infrared optical beam induced resistance change; liquid crystal methods; spatial resolution; Electrical resistance measurement; Failure analysis; Fluorescence; Laser beams; Laser transitions; Microscopy; Optical beams; Pattern analysis; Testing; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345633

Filename

1345633