DocumentCode
1614628
Title
Silicon and Silicon Carbide Avalanche Diodes for Use in Pulse Sharpening and Closing Switch Applications
Author
Focia, Ronald J.
Author_Institution
Pulsed Power Labs., Inc., Edgewood
fYear
2007
Firstpage
196
Lastpage
196
Abstract
Summary form only given. The preliminary experimental results of an ongoing research effort are presented which focuses on numerical modeling, fabrication and utilization of silicon (Si) and silicon carbide (SiC) avalanche diodes (AD) in pulse sharpening and closing switch applications. The ultimate goal of the effort is to provide a source for components and designs for multi-kilovolt, low jitter, all solid-state ultra-wideband (UWB) microwave sources.
Keywords
avalanche diodes; microwave devices; power semiconductor diodes; semiconductor device models; silicon; silicon compounds; wide band gap semiconductors; Si; SiC; avalanche diodes; closing switches; pulse sharpening; semiconductor device models; solid-state ultra-wideband microwave sources; Circuit simulation; Fabrication; Jitter; Laboratories; Pulse generation; Semiconductor diodes; Silicon carbide; Solid state circuits; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
Conference_Location
Albuquerque, NM
ISSN
0730-9244
Print_ISBN
978-1-4244-0915-0
Type
conf
DOI
10.1109/PPPS.2007.4345502
Filename
4345502
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