DocumentCode :
1614672
Title :
Failure rate estimation of each process layer using critical area analysis and failing bit results
Author :
Matsumoto, C. ; Hamamura, Y. ; Chida, T. ; Tsunoda, Y. ; Go, N. ; Uozaki, H. ; Miyazaki, I. ; Kamohara, S. ; Kaneko, Y. ; Kanamitsu, K.
Author_Institution :
Production Eng. Res. Lab., Hitachi, Ltd., Yokohama, Japan
fYear :
2010
Firstpage :
45
Lastpage :
50
Abstract :
We propose a novel method by which to accurately estimate the failure rate of each process layer on a wafer-by-wafer basis. In this method, we use the failing bit data and the results of critical area analysis (CAA) of each failing bit signature (FBS). We formulate the estimation as a linear programming model and convert the failure rate of each FBS to the failure rate of each process layer. A comparison of the failure rate estimated using this method and that obtained by test structure analysis reveals good agreement and the total estimation error of all process layers are within several percent. We also improved a legacy yield management system by implementing this estimation method. This system is used for failure analysis during semiconductor manufacturing. We show two case studies for 65 nm and 45 nm technology node products.
Keywords :
failure analysis; linear programming; semiconductor device manufacture; CAA; FBS; critical area analysis; failing bit results; failing bit signature; failure rate estimation; legacy yield management system; linear programming model; process layer; semiconductor manufacturing; size 45 nm; size 65 nm; test structure analysis; wafer-by-wafer basis; Accuracy; Estimation; Failure analysis; Logic gates; Servers; Solid modeling; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location :
San Francisco, CA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-6517-0
Type :
conf
DOI :
10.1109/ASMC.2010.5551419
Filename :
5551419
Link To Document :
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