DocumentCode
1614704
Title
Understanding the NBTI degradation in halo-doped channel p-MOSFETs
Author
Jha, Neeraj K. ; Rao, V. Ramgopal
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
fYear
2004
Firstpage
311
Lastpage
314
Abstract
The role of initial interface damage for negative bias temperature instability (NBTI) degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.
Keywords
MOSFET; doping profiles; hole density; interface structure; ion implantation; semiconductor device reliability; semiconductor device testing; semiconductor-insulator boundaries; thermal stability; NBTI degradation; SiO2-Si; halo-doped channel p-MOSFET; hole density; initial interface damage; initial silicon-oxide interface quality; negative bias temperature instability; oxide fields; short channel MOSFET; Annealing; CMOS technology; Degradation; Implants; Interface states; MOS devices; MOSFET circuits; Niobium compounds; Stress; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN
0-7803-8454-7
Type
conf
DOI
10.1109/IPFA.2004.1345639
Filename
1345639
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