Reliability control monitor guideline of negative bias temperature instability for 0.13 μm CMOS technology

Reliability control monitor (RCM) of negative bias temperature instability (NBTI) was investigated in 0.13 μm p-MOSFETs. For the first time we propose a new guideline, which is applicable for all technologies, for in-line negative bias temperature instability monitor. By applying some novel transformation methodologies, a time-consuming qualification based procedure can be transferred into a fast in-line monitor procedure. Combination of package level qualification phase and wafer level control monitor phase on NBTI will form a thorough NBTI immunity assessment on the state-of-the-art p-MOSFETs.