Title :
Reliability control monitor guideline of negative bias temperature instability for 0.13 μm CMOS technology
Author :
Wang, C.S. ; Chang, W.C. ; Ke, W.S. ; Lee, C.F. ; Su, K.C. ; Chang, Y.J. ; Chou, E.N. ; Chen, M.J.
Author_Institution :
Quality & Reliability Assurance Div., United Microelectron. Corp., Hsinchu, Taiwan
Abstract :
Reliability control monitor (RCM) of negative bias temperature instability (NBTI) was investigated in 0.13 μm p-MOSFETs. For the first time we propose a new guideline, which is applicable for all technologies, for in-line negative bias temperature instability monitor. By applying some novel transformation methodologies, a time-consuming qualification based procedure can be transferred into a fast in-line monitor procedure. Combination of package level qualification phase and wafer level control monitor phase on NBTI will form a thorough NBTI immunity assessment on the state-of-the-art p-MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; condition monitoring; failure analysis; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; thermal stability; 0.13 micron; CMOS technology; NBTI immunity assessment; RCM; in-line monitor procedure; in-line negative bias temperature instability monitor; negative bias temperature instability; p-MOSFET; package level qualification phase; qualification based procedure; reliability control monitor guideline; transformation methodologies; wafer level control monitor phase; CMOS technology; Guidelines; MOSFET circuits; Monitoring; Negative bias temperature instability; Niobium compounds; Qualifications; Temperature control; Temperature measurement; Titanium compounds;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345640
