DocumentCode
1614788
Title
OCVD carrier lifetime measurements on an inhomogeneous diode structure
Author
Benda, V. ; Novák, Z.
Author_Institution
Dept. of Electrotechnol., Tech. Univ. Prague, Czech Republic
Volume
1
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
393
Lastpage
395
Abstract
This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified
Keywords
carrier lifetime; electron-hole recombination; semiconductor device measurement; semiconductor device models; semiconductor diodes; voltage measurement; OCVD method; inhomogeneous diode structure; lumped charge approximation; nonuniform carrier lifetime distribution; open circuit voltage decay carrier lifetime measurements; parallel connected twin diodes; Charge carrier lifetime; Charge measurement; Circuits; Current measurement; Diodes; Insulated gate bipolar transistors; Silicon devices; Temperature; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-7235-2
Type
conf
DOI
10.1109/MIEL.2002.1003220
Filename
1003220
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