Title :
Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates
Author :
Mitin, V.F. ; Kholevchuk, V.V. ; Konakova, R.V. ; Venger, E.F. ; Odarich, V.A. ; Rudenko, O.V. ; Semen, M.P. ; Khimenko, M.V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fDate :
6/24/1905 12:00:00 AM
Abstract :
Structural, electrical and optical properties of Ge films on semi-insulating GaAs substrates have been investigated. Ge films were obtained using thermal evaporation in a vacuum onto semi-insulated GaAs(100) substrates. During the Ge deposition process the substrate temperature was varied from 120 to 450 °C. The film thicknesses were varied from 0.8 up to 1.5 μm. X-ray and electron diffraction, atomic force microscopy (AFM), multiangle ellipsometric and galvanomagnetic (Hall effect, resistance and magneto-resistance) measurements have been used for these investigations.
Keywords :
Hall effect; X-ray diffraction; absorption coefficients; atomic force microscopy; electrical resistivity; electron diffraction; elemental semiconductors; ellipsometry; gallium arsenide; germanium; magnetoresistance; refractive index; semiconductor thin films; surface structure; vacuum deposited coatings; 0.8 to 1.5 micron; 120 to 450 C; AFM; Ge deposition process; Ge film electrical properties; Ge film optical properties; Ge film surface structure; Ge-GaAs; Hall effect; X-ray diffraction; absorption coefficient; atomic force microscopy; electron diffraction; film thickness; galvanomagnetic measurements; magneto-resistance; multiangle ellipsometric measurements; refractive index; resistance; semi-insulating GaAs(100) substrates; substrate temperature; vacuum thermal evaporation; Atomic force microscopy; Atomic measurements; Electrons; Force measurement; Gallium arsenide; Optical films; Substrates; Surface structures; Temperature; X-ray diffraction;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003222
