The effect of geometry in the characterization of barrier profile in vias by transmission electron microscopy

Author

Chen, Li-Chien ; Lee, Tan-Chen ; Huang, Jui-Yen ; Su, David

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2004

Firstpage

323

Lastpage

325

Abstract

Characterization of the profile and thickness of barrier layers in cylindrical vias by cross-sectional transmission electron microscopy (TEM) is crucial for understanding the behavior of Cu interconnects and is becoming a challenge for the 0.13 μm node and below. In this study, we demonstrate how the geometry of the TEM sample affects the contrast of the barrier layer and propose guidelines for TEM sample preparation and image interpretation.

Keywords

chemical interdiffusion; diffusion barriers; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; specimen preparation; transmission electron microscopy; 0.13 micron; Cu; Cu interconnects; TEM image interpretation; TEM sample geometry; TEM sample preparation; barrier layer contrast; barrier layer thickness; cross-sectional TEM; cylindrical vias; failure analysis; transmission electron microscopy; via barrier profile; Condition monitoring; Electron beams; Failure analysis; Geometry; Guidelines; Integrated circuit interconnections; Manufacturing industries; Semiconductor device manufacture; Thickness measurement; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345644

Filename

1345644