• DocumentCode
    1614999
  • Title

    The use of integrated Energy (EDX) and Wavelength (WDX) Dispersive X-ray system for defects root cause analysis in an advanced logic fab

  • Author

    Porat, Ronnie ; Porst, Andreas ; Lohse, Joerg ; Matke, Guido ; Rebien, Matthias

  • Author_Institution
    Appl. Mater., Rehovot, Israel
  • fYear
    2010
  • Firstpage
    123
  • Lastpage
    128
  • Abstract
    Over the last decade, integrated EDX (Energy Dispersive X-ray) systems on in-line SEM review tools have become the main method of providing the fab with a fast and efficient way to identify and reduce defects and yield limiting sources. As device sizes keep scaling down, the defects of interest size also becomes smaller, increasing the effective time needed for an accurate spectrum acquisition. In order to keep up with the demand for high defect analysis rates in the production fab, material analysis (MA) must also be done faster, even on very small (<;50 nm) particles. In this paper, the capabilities and limitations of each analysis technology will be discussed as well as the performance of the combination of advanced EDX and WDX systems. In addition we will describe a method to resolve challenging MA cases by using a Wavelength Dispersive X-ray (WDX) system integrated side by side with an advanced EDX system. The discussion will include four case studies demonstrating the use of these advanced MA technologies in an advanced logic fab.
  • Keywords
    X-ray chemical analysis; integrated circuit manufacture; WDX systems; advanced EDX systems; advanced logic fab; defect root cause analysis; in-line SEM review tools; integrated energy dispersive X-ray systems; material analysis; microchip manufacturing process; production fab; spectrum acquisition; wavelength dispersive X-ray system; Book reviews; Copper; Crystals; Detectors; Electron beams; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
  • Conference_Location
    San Francisco, CA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-6517-0
  • Type

    conf

  • DOI
    10.1109/ASMC.2010.5551432
  • Filename
    5551432