• DocumentCode
    1615065
  • Title

    Control of etch and deposition for embedded SiGe

  • Author

    Van Roijen, R. ; Kempisty, J. ; Sinn, C. ; Afoh, W. ; Tabakman, K. ; Logan, R.

  • Author_Institution
    IBM Syst. & Technol., Hopewell Junction, VA, USA
  • fYear
    2010
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    Embedded SiGe is applied in CMOS at recent technology nodes to improve device performance and enable scaling. The position of the SiGe surface with respect to the channel is found to have significant impact on the pFET threshold voltage and also on device variability. Therefore the recess etch and deposition of the embedded SiGe has to be very well controlled. We show the sensitivity of the device to the fill process and describe the feed forward and feedback techniques used to optimize the control of epitaxy.
  • Keywords
    CMOS integrated circuits; coating techniques; etching; silicon compounds; CMOS; SiGe; SiGe surface; deposition control; device performance; device variability; embedded SiGe; etch control; feedback techniques; feedforward techniques; pFET threshold voltage; Implants; Logic gates; Performance evaluation; Silicon; Silicon germanium; Surface treatment; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
  • Conference_Location
    San Francisco, CA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-6517-0
  • Type

    conf

  • DOI
    10.1109/ASMC.2010.5551434
  • Filename
    5551434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1615065