Title :
Control of etch and deposition for embedded SiGe
Author :
Van Roijen, R. ; Kempisty, J. ; Sinn, C. ; Afoh, W. ; Tabakman, K. ; Logan, R.
Author_Institution :
IBM Syst. & Technol., Hopewell Junction, VA, USA
Abstract :
Embedded SiGe is applied in CMOS at recent technology nodes to improve device performance and enable scaling. The position of the SiGe surface with respect to the channel is found to have significant impact on the pFET threshold voltage and also on device variability. Therefore the recess etch and deposition of the embedded SiGe has to be very well controlled. We show the sensitivity of the device to the fill process and describe the feed forward and feedback techniques used to optimize the control of epitaxy.
Keywords :
CMOS integrated circuits; coating techniques; etching; silicon compounds; CMOS; SiGe; SiGe surface; deposition control; device performance; device variability; embedded SiGe; etch control; feedback techniques; feedforward techniques; pFET threshold voltage; Implants; Logic gates; Performance evaluation; Silicon; Silicon germanium; Surface treatment; Threshold voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6517-0
DOI :
10.1109/ASMC.2010.5551434
