Title :
Study of relationship between 300 mm Si wafer surface and annealing temperatures for advanced semiconductor-based applications
Author :
Wocko, Andreas ; Radovanovic, Sanda ; Dighe, Prasanna
Author_Institution :
KLA-Tencor GmbH, Dresden, Germany
Abstract :
Surface morphology dependence on annealing conditions is one of the most important parameters that is being monitored in current manufacturing environments. Understanding the science behind surface properties and anneal temperatures is of high interest. This paper explores this phenomenon in more detail and its practical applications for manufacturing environments.
Keywords :
annealing; elemental semiconductors; semiconductor device manufacture; silicon; surface morphology; Si; Si wafer surface; annealing temperatures; manufacturing environments; size 300 mm; surface morphology dependence; Annealing; Conductivity; Surface morphology; Surface roughness; Surface topography; Surface treatment; Temperature measurement;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-6517-0
DOI :
10.1109/ASMC.2010.5551438
