• DocumentCode
    1615293
  • Title

    Device-design metrics to improve manufacturability

  • Author

    Peterson, Kirk ; Logan, Ron ; Yu, Xiaojun ; Dezfulian, Kevin ; Bazan, Greg ; Winslow, Jon ; Zamdmer, Noah ; Dubuque, Lenny ; Walsh, Brian ; Norfleet, Andrew ; Clougherty, Fran ; Bayat, Ben ; Mocuta, Anda ; Rim, Ken

  • Author_Institution
    IBM Syst. & Technol. Group, Essex Junction, VT, USA
  • fYear
    2010
  • Firstpage
    179
  • Lastpage
    183
  • Abstract
    Over the past three technology generations we have made systematic observations on device-design strategies leading to optimal circuit-limited yield. These strategies now impose additional considerations that need to be directly coupled into the technology-development paradigm. At the core of the present discussion is the balance between traditional FET (Field Effect Transistor) and small-circuit optimization and the concurrent impact seen at product level. Certain device-design tradeoffs need to be understood in order to maximize performance for a diverse range of products.
  • Keywords
    circuit optimisation; field effect transistors; semiconductor device manufacture; device design metrics; field effect transistor; semiconductor device design; small-circuit optimization; technology-development paradigm; Capacitance; Delay; FETs; Logic gates; Performance evaluation; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
  • Conference_Location
    San Francisco, CA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-6517-0
  • Type

    conf

  • DOI
    10.1109/ASMC.2010.5551444
  • Filename
    5551444