The effect of FSG stability at high temperature on stress-induced voiding in Cu dual-damascene interconnects

Author

Oh, Hyeok-Sang ; Chung, JuHyuk ; Lee, Jung-Woo ; Kang, Ki-ho ; Park, Dea-Gun ; Hah, SangRok ; Cho, In-soo ; Park, Kwang-Myeon

Author_Institution

Syst. LSI Div., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea

fYear

2004

Firstpage

21

Lastpage

23

Abstract

The effect of FSG film properties as inter-metal dielectrics on stress-induced voiding (SIV) phenomena in Cu dual-damascene interconnects has been investigated with various FSG-films. HDPFSG and PEFSG2 showed less SIV failure than those of PEFSGI and 3. These behaviors of SIV according to FSG films agree well with desorbed amount of hydrogen, oxygen and fluorine ions from FSG films at high temperature over 400°C. The result of SIMS analysis suggests that SIV phenomena are improved by application of stable FSG film without desorption at high temperature such as HDPFSG and PEFSG2 used in this work.

Keywords

copper; dielectric thin films; integrated circuit interconnections; integrated circuit reliability; thermally stimulated desorption; voids (solid); Cu; Cu dual-damascene interconnects; FSG film properties; FSG stability; HDPFSG; PEFSG2; SIMS analysis; SIV phenomena; fluorine ions; hydrogen ions; intermetal dielectrics; oxygen ions; stress-induced voiding; Compressive stress; Dielectrics; Gases; Integrated circuit interconnections; Silicon compounds; Stability; Temperature; Testing; Thermal stresses; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345671

Filename

1345671