Title :
A robust, deep-submicron copper interconnect structure using self-aligned metal capping method
Author :
Saito, Takashi ; Ashihara, H. ; Ishikawa, Kenji ; Miyauchi, Y. ; Yamada, Y. ; Uno, S. ; Kubo, Momoji ; Noguchi, J. ; Oshima, Toru ; Aoki, Hidetaka
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
A high reliable copper interconnects with metallic cap is studied. W-CVD process combined with pre-cleaning succeeded in self-aligned metal deposition on Cu interconnects surface. Degradation of leakage current between adjacent Cu wires is suppressed by process optimization. Reliability characteristics such as electromigration and stress-migration of metal capped Cu interconnect structure are investigated and are superior to those of conventional one. These results reveal that Cu and vacancy diffusion at the Cu wire surface is successfully suppressed by eliminating Cu/dielectric interface.
Keywords :
chemical vapour deposition; copper; electromigration; integrated circuit interconnections; leakage currents; Cu; Cu wire surface; Cu-dielectric interface; W-CVD process; copper interconnect surface; deep-submicron copper interconnect; electromigration characteristics; high reliable copper interconnects; leakage current; metal capped Cu interconnect; metallic cap; pre-cleaning process; process optimization; reliability characteristics; robust copper interconnect; self-aligned metal capping method; self-aligned metal deposition; stress-migration characteristics; vacancy diffusion; Copper; Degradation; Dielectric measurements; Leakage current; Pollution measurement; Robustness; Stress; Surface resistance; Testing; Wires;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345676
