DocumentCode :
1615471
Title :
Developing a high volume manufacturing method to eliminate P Buried Layer implant defects
Author :
Sehgal, Akshey ; Budri, Thanas ; Klatt, Jeffrey ; Printy, Craig ; Ruby, Scott ; Ramdani, Jamal
Author_Institution :
Nat. Semicond. Corp., S Portland, ME, USA
fYear :
2010
Firstpage :
211
Lastpage :
212
Abstract :
Atomic Force Microscopy, Deep Level Transient Spectroscopy and Secondary Ion Mass Spectroscopy were used to study defects created in the P Buried Layer while using a BF2 implant. The P Buried Layer defects were traced to the unintentional co-implantation of Mo along with the BF2 implant. Using a Tungsten source, instead of a Molybdenum source for the BF2 implant, reduced but did not eliminate these defects. A novel, high volume processing method was developed to produce metal contamination-free buried layers and verified by deep level transient spectroscopy spectra.
Keywords :
BiCMOS integrated circuits; atomic force microscopy; bipolar transistors; boron compounds; buried layers; deep level transient spectroscopy; molybdenum; secondary ion mass spectra; semiconductor device manufacture; surface contamination; BiCMOS PNP transistors; Jk:BF2,Mo; P buried layer implant defect elimination; atomic force microscopy; deep level transient spectroscopy spectra; high volume manufacturing method; metal contamination-free buried layers; secondary ion mass spectroscopy; unintentional coimplantation; Contamination; Hafnium; Implants; Surface treatment; Transistors; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location :
San Francisco, CA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-6517-0
Type :
conf
DOI :
10.1109/ASMC.2010.5551450
Filename :
5551450
Link To Document :
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