Title :
Simulation-Based Analysis of the Single Event Transient Response of a Single Event Latchup Protection Switch
Author :
Andjelkovic, Marko ; Petrovic, Vladimir ; Stamenkovic, Zoran ; Ristic, Goran ; Jovanovic, Goran
Author_Institution :
Fac. of Electron. Eng., Univ. of Nis, Nis, Serbia
Abstract :
A single event latchup protection switch (SPS) has been developed in the IHP 250 nm bulk CMOS technology. The SPS has been designed as a standard library cell intended for implementation in the radiation-tolerant application specific integrated circuits (ASICs). It provides detection of single event latchup and subsequent shut-down of power supply to critical elements within the chip to restore the normal operation. However, the SPS cell might be also susceptible to single event transients. In that regard, this work presents the simulation-based analysis of the response of SPS cell in the case of single event transients. The dependence of the single event transient response with respect to the injected charge, supply voltage, load and sensing transistor´s size has been analyzed.
Keywords :
CMOS integrated circuits; application specific integrated circuits; power supply circuits; radiation hardening (electronics); transient response; ASIC; IHP bulk CMOS technology; injected charge; load transistor size; power supply; radiation-tolerant application specific integrated circuits; sensing transistor size; simulation-based analysis; single event latchup protection switch; single event transient response; size 250 nm; standard library cell; subsequent shut-down; supply voltage; CMOS integrated circuits; Integrated circuit modeling; Inverters; Load modeling; Sensors; Standards; Transistors; circuit-level modeling and simulation; single event latchup; single event transient;
Conference_Titel :
Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2015 IEEE 18th International Symposium on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-6779-7
DOI :
10.1109/DDECS.2015.63
