DocumentCode :
1615562
Title :
A BiCMOS implementation of MOSIS fabricated circuit elements
Author :
Menezes, Conrad O. ; Smith, Edwyn D.
Author_Institution :
Dept. of Electr. Eng., Toledo Univ., OH, USA
fYear :
1992
Firstpage :
1512
Abstract :
Attempts to address the issue of layout and characterization of bipolar transistors and base diffused resistors fabricated in a MOSIS 2-μm, n-well, low-noise CMOS analog process. The results obtained from a test chip were used to implement a BiCMOS driver with the capability of driving a large capacitance at high speed. The effectiveness of this design is proven by a circuit simulator as well as evaluations on prototypes fabricated
Keywords :
BiCMOS integrated circuits; digital simulation; driver circuits; linear integrated circuits; 2 micron; BiCMOS implementation; MOSIS fabricated circuit elements; base diffused resistors; bipolar transistors; circuit simulator; layout; low-noise CMOS analog process; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit noise; Driver circuits; Geometry; Manufacturing processes; Resistors; Semiconductor device noise; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
Type :
conf
DOI :
10.1109/MWSCAS.1992.271074
Filename :
271074
Link To Document :
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