Optimization of SiCOH dielectrics for integration in a 90nm CMOS technology

Author

Grill, A. ; Edelstein, D. ; Restaino, D. ; Lane, M. ; Gates, S. ; Liniger, E. ; Shaw, T. ; Liu, X.H. ; Klaus, D. ; Patel, V. ; Cohen, S. ; Simonyi, E. ; Klymko, N. ; Lane, S. ; Ida, K. ; Vogt, S. ; Van Kleeck, T. ; Davis, C. ; Ono, M. ; Nogami, T. ; Ivers

Author_Institution

IBM Res. Div., IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

Firstpage

54

Lastpage

56

Abstract

The research integration of SiCOH films in a reliable ULSI integrated circuit chip imposes many requirements on the properties of the dielectric material. This paper describes a selection and optimization process for choosing the best film to be integrated in Cu wiring levels of ULSI CMOS chips in the 90 nm technology node.

Keywords

CMOS integrated circuits; dielectric thin films; silicon compounds; 90 nm; Cu wiring; SiCOH; SiCOH dielectrics; SiCOH films; ULSI CMOS chips; dielectric material; optimization process; reliable ULSI integrated circuit; research integration; selection process; Adhesives; Amorphous materials; CMOS technology; Capacitance measurement; Dielectric measurements; Mechanical factors; Metal-insulator structures; Microelectronics; Semiconductor films; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345682

Filename

1345682