• DocumentCode
    1615629
  • Title

    Thermal evaporation synthesis and properties of ZnO nano/microstructures using Sn reducing agents

  • Author

    Hang Lv ; Xibao Yang ; Xiaodong Lu ; Boxin Li ; Qiushi Wang ; Lina Zhang ; Wei Zhang ; Shuxian Lun ; Fan Zhang ; Hongdong Li

  • Author_Institution
    Coll. of New Energy, Bohai Univ., Jinzhou, China
  • fYear
    2013
  • Firstpage
    841
  • Lastpage
    846
  • Abstract
    ZnO nano/microstructures have been successfully synthesized via the thermal evaporation mothed using Sn powders as the reducing agents. The as-synthesized products have been systematically studied by X-ray powder diffraction (XRD), Raman spectroscopy (RS), scanning electron microscope (SEM), electron energy-dispersive X-ray (EDX) and ultraviolet-visible spectrum (UV-vis). The results indicate that pure ZnO and Zn2SnO4-doped ZnO were collected at the growth temperatures of 600 °C and 750 °C, respectively. Furthermore, the band gap energy of the as-synthesized product is estimated to be smaller than the reported value for ZnO. The Zn2SnO4 phase in the ZnO nano/microstructures plays an important role in the optical property.
  • Keywords
    II-VI semiconductors; Raman spectra; X-ray chemical analysis; X-ray diffraction; energy gap; evaporation; microfabrication; nanofabrication; nanostructured materials; scanning electron microscopy; ultraviolet spectra; visible spectra; zinc compounds; EDX; Raman spectroscopy; SEM; UV-vis spectrum; X-ray powder diffraction; XRD; ZnO; band gap energy; electron energy-dispersive X-ray; microstructures; nanostructures; optical property; reducing agents; scanning electron microscopy; temperature 600 degC; temperature 750 degC; thermal evaporation synthesis; ultraviolet-visible spectrum; Graphite; Microstructure; Photonic band gap; Powders; Scanning electron microscopy; Tin; Zinc oxide; Sn; ZnO nano/micro structures; optical property; thermal evaporation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Chinese Automation Congress (CAC), 2013
  • Conference_Location
    Changsha
  • Print_ISBN
    978-1-4799-0332-0
  • Type

    conf

  • DOI
    10.1109/CAC.2013.6775850
  • Filename
    6775850