DocumentCode :
1615632
Title :
Wafer bevel shape inducing high defect density in shallow trench isolation process
Author :
Dureuil, V. ; Baltzinger, J.L. ; Tastets, K. ; Vallier, L. ; Wlodarczyk, N. ; Bernaud, O. ; Leroueille, J. ; Mouroux, C.
Author_Institution :
Altis Semicond., Corbeil Essonnes, France
fYear :
2010
Firstpage :
213
Lastpage :
216
Abstract :
The defect density reduction is one of the main challenges to increase the yield. This article presents a mechanism of defect formation specific to the STI module. This defect-flake like - appears during HDP-CVD process deposition. It comes from oxide bubbles localised at the bevel of the substrate. The suppression of this defect consists into the bevel shape optimization. Moreover, process improvement as resist strip post etch contributes to clean the bevel from polymer and reduces strongly the flakes density.
Keywords :
bubbles; crystal defects; isolation technology; plasma CVD; resists; HDP-CVD process deposition; STI module; bevel shape high density plasma chemical vapor deposition; defect density reduction; defect flake density; high defect density; oxide bubbles; polymer; shallow trench isolation process; wafer bevel shape optimisation; Inspection; Polymers; Radio frequency; Scanning electron microscopy; Shape; Strips; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location :
San Francisco, CA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-6517-0
Type :
conf
DOI :
10.1109/ASMC.2010.5551455
Filename :
5551455
Link To Document :
بازگشت