• DocumentCode
    1615632
  • Title

    Wafer bevel shape inducing high defect density in shallow trench isolation process

  • Author

    Dureuil, V. ; Baltzinger, J.L. ; Tastets, K. ; Vallier, L. ; Wlodarczyk, N. ; Bernaud, O. ; Leroueille, J. ; Mouroux, C.

  • Author_Institution
    Altis Semicond., Corbeil Essonnes, France
  • fYear
    2010
  • Firstpage
    213
  • Lastpage
    216
  • Abstract
    The defect density reduction is one of the main challenges to increase the yield. This article presents a mechanism of defect formation specific to the STI module. This defect-flake like - appears during HDP-CVD process deposition. It comes from oxide bubbles localised at the bevel of the substrate. The suppression of this defect consists into the bevel shape optimization. Moreover, process improvement as resist strip post etch contributes to clean the bevel from polymer and reduces strongly the flakes density.
  • Keywords
    bubbles; crystal defects; isolation technology; plasma CVD; resists; HDP-CVD process deposition; STI module; bevel shape high density plasma chemical vapor deposition; defect density reduction; defect flake density; high defect density; oxide bubbles; polymer; shallow trench isolation process; wafer bevel shape optimisation; Inspection; Polymers; Radio frequency; Scanning electron microscopy; Shape; Strips; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
  • Conference_Location
    San Francisco, CA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-6517-0
  • Type

    conf

  • DOI
    10.1109/ASMC.2010.5551455
  • Filename
    5551455