DocumentCode :
1615675
Title :
A study on defect formation and magnetic properties of Ni doped ZnO nanowires
Author :
Li-Bin Shi
Author_Institution :
Sch. of New Energies, Bohai Univ., Jinzhou, China
fYear :
2013
Firstpage :
853
Lastpage :
857
Abstract :
In the paper, formation and ionization energies of defects and ferromagnetism in Ni doped ZnO nanowires (NW) are investigated by the first principles. Ni impurity has lower formation energies in surface sites, which indicates that Ni impurity occupies preferably surface sites of NW. The transition energy levels of Ni defect are located at 0.33 and 1.71 eV. It is found that IZn(oct) and VO(B) are deep donor, VZn(B) and IO(oct) are deep acceptor. Ferromagnetic (FM) and antiferromagnetic (AFM) coupling are investigated by 9 different configurations, which indicates that FM coupling between Ni atoms is more stable than AFM coupling. The FM stability can be explained by Ni 3d energy level coupling. In addition, impact of the vacancies [VO (B) and VZn (B)] and interstitials [IO (oct) and IZn (oct)] on FM coupling is also investigated. It is found that magnetic moment of Ni can be tuned by these defects.
Keywords :
II-VI semiconductors; ab initio calculations; antiferromagnetic materials; deep levels; defect states; ferromagnetic materials; impurity states; interstitials; magnetic impurities; magnetic moments; nanomagnetics; nanowires; nickel; semimagnetic semiconductors; vacancies (crystal); wide band gap semiconductors; zinc compounds; IO(oct) deep acceptor; IZn(oct) deep donor; Ni 3d energy level coupling; Ni doped ZnO nanowires; Ni impurity; VO(B) deep donor; VZn(B) deep acceptor; ZnO:Ni; antiferromagnetic coupling; defect formation; ferromagnetic coupling; ferromagnetism; first principles calculation; formation energies; interstitials; ionization energies; magnetic moment; magnetic properties; surface sites; transition energy levels; vacancies; Couplings; Frequency modulation; Magnetic moments; Nickel; Three-dimensional displays; Zinc oxide; defect; ferromagnetism; semiconductor; the first principles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Chinese Automation Congress (CAC), 2013
Conference_Location :
Changsha
Print_ISBN :
978-1-4799-0332-0
Type :
conf
DOI :
10.1109/CAC.2013.6775852
Filename :
6775852
Link To Document :
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