DocumentCode :
1615823
Title :
Experiments and models for circuit-level assessment of the reliability of Cu metallization
Author :
Thompson, C.V. ; Gan, C.L. ; Alam, S.M. ; Troxel, D.E.
Author_Institution :
Material Sci. & Eng., MIT, Cambridge, MA, USA
fYear :
2004
Firstpage :
69
Lastpage :
71
Abstract :
Accurate circuit-level reliability analyses can be based in experimental results for simple interconnect segments if interconnect trees, linked interconnect segments within one level of metallization, are used as fundamental reliability units. The reliability behaviour of both segments and trees is different for Al and Cu. A revised method is proposed for tree-based circuit-level reliability analyses for Cu. The types of additional experimental data that would allow assessments with improves accuracy are outlined.
Keywords :
integrated circuit modelling; integrated circuit reliability; metallisation; Cu; Cu metallization reliability; circuit-level assessment; fundamental reliability units; interconnect trees; linked interconnect segments; reliability behaviour; tree-based circuit-level reliability analyses; Circuit analysis; Current density; Electromigration; Gallium nitride; Integrated circuit interconnections; Materials reliability; Materials science and technology; Metallization; Reliability engineering; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
Type :
conf
DOI :
10.1109/IITC.2004.1345689
Filename :
1345689
Link To Document :
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