Title :
IGBT ghost failures in boost topology circuits explained through third quadrant operation
Author :
Craig, Alexander H. ; Randall, Ronald H. ; Yedinak, Joe
Author_Institution :
Intersil Corp., Mountaintop, PA, USA
fDate :
6/22/1905 12:00:00 AM
Abstract :
Faster IGBTs are being applied increasingly in boost topology circuits such as the boost power factor correction (PFC) and flyback power converter circuits. Unfortunately, field application of IGBTs in these circuits has resulted in unexplained IGBT failures. These random failures may result from IGBT third-quadrant reverse-avalanche operation. Analysis has confirmed that many continuous current mode (CCM) circuits operate in this mode transiently. The effects of this operation may have a cumulative destructive effect on the IGBT. This effect and the physical causes of the failures are explained through circuit simulation, experimentation and scanning electron microscope (SEM) analysis. Circuit designer guidance is provided
Keywords :
AC-DC power convertors; failure analysis; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; rectifying circuits; semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor device testing; switching circuits; AC/DC power conversion; IGBT ghost failures; boost power factor correction; boost topology circuits; circuit simulation; continuous current mode circuits; cumulative destructive effect; flyback power converter; power IGBTs; reverse-avalanche operation; scanning electron microscope analysis; third quadrant operation; Capacitance; Circuit topology; Diodes; Failure analysis; Inductors; Insulated gate bipolar transistors; Scanning electron microscopy; Switched-mode power supply; Switches; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-5864-3
DOI :
10.1109/APEC.2000.822825
