DocumentCode
1615871
Title
Breakdown characteristics of different grades of CVD diamond samples
Author
Lebey, T. ; Malec, D. ; Dutarde, E.
Author_Institution
LGET/UPS, Toulouse, France
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
208
Lastpage
210
Abstract
500μm thickness CVD diamond samples of different grades related to the sp2/sp3 phase ratio and able to be used as substrates in power electronic applications have been characterized. The following conclusions may be drawn: breakdown and resistivity values of thick CVD diamond are far from the ones claimed for thin film (~MV/cm). and for the natural materials (~10 MV/cm) Samples presenting the largest amount of nitrogen behave from an electrical point of view better than pure "undoped" diamond samples
Keywords
CVD coatings; diamond; electric breakdown; electric strength; electrical resistivity; power electronics; 500 micron; C; CVD samples; breakdown; diamond; power electronic applications; resistivity values; sp2/sp3 phase ratio; Chemical vapor deposition; Electric breakdown; Frequency; Grain boundaries; Performance evaluation; Phase measurement; Power electronics; Semiconductor materials; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
Conference_Location
Eindhoven
Print_ISBN
0-7803-6352-3
Type
conf
DOI
10.1109/ICSD.2001.955593
Filename
955593
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