Title :
Analysis by measurements and circuit simulations of the PT- and NPT-IGBT under different short-circuit conditions
Author :
Cotorogea, M. ; Claudio, A. ; Aguayo, J.
Author_Institution :
Centro Nacional de Invest. y Desarrollo Tecnologico, Morelos, Mexico
fDate :
6/22/1905 12:00:00 AM
Abstract :
An analysis of the behavior of 600 V PT and NPT IGBTs under following cases of short circuit is reported: (1) the short circuit occurs before the device actively turns on; (2) the short circuit occurs when the device is conducting; and (3) as case (1), but operating at low intermediate voltage and with high stray inductance. The analysis is performed using both experimental results and SPICE-simulations
Keywords :
SPICE; circuit simulation; insulated gate bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device testing; short-circuit currents; 600 V; NPT-IGBT; PT-IGBT; SPICE simulations; circuit simulations; experimental results; intermediate voltage operation; measurements; nonpunchthrough IGBTs; punchthrough IGBTs; short circuits; short-circuit conditions; stray inductance; Analytical models; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Low voltage; Performance analysis; Steady-state; Threshold voltage; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-5864-3
DOI :
10.1109/APEC.2000.822827
