Title :
Reliability of air-gap Cu interconnect and approach to selective W sealing using 90nm node technology
Author :
Noguchi, J. ; Sato, K. ; Konishi, N. ; Uno, S. ; Oshima, T. ; Tanaka, U. ; Ishikawa, K. ; Ashihara, E. ; Saito, T. ; Kubo, M. ; Aoki, E. ; Fujiwara, T.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
4 levels of Cu/air-gap interconnects were successfully fabricated and the reliability of the air-gap interconnects using ArF/90nm node technology was investigated. There are distinguished improvements of leakage current and TDDB characteristics by the application of air-gap interconnects. In addition, an air-gap interconnect is improved with a selective W sealing process . This results in drastic reduction of capacitance and effective dielectric constant.
Keywords :
argon compounds; capacitance; copper; integrated circuit interconnections; integrated circuit reliability; leakage currents; sealing materials; tungsten; 90 nm; 90nm node technology; ArF-Cu; TDDB characteristics; W; air-gap Cu interconnect; air-gap interconnects reliability; capacitance reduction; effective dielectric constant; leakage current; selective W sealing; Air gaps; CMOS process; CMOS technology; Capacitance; Cellular neural networks; Collision mitigation; Delay; Dielectrics; Silicon carbide; Very large scale integration;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345693
