Reliability of air-gap Cu interconnect and approach to selective W sealing using 90nm node technology

Author

Noguchi, J. ; Sato, K. ; Konishi, N. ; Uno, S. ; Oshima, T. ; Tanaka, U. ; Ishikawa, K. ; Ashihara, E. ; Saito, T. ; Kubo, M. ; Aoki, E. ; Fujiwara, T.

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

2004

Firstpage

81

Lastpage

83

Abstract

4 levels of Cu/air-gap interconnects were successfully fabricated and the reliability of the air-gap interconnects using ArF/90nm node technology was investigated. There are distinguished improvements of leakage current and TDDB characteristics by the application of air-gap interconnects. In addition, an air-gap interconnect is improved with a selective W sealing process . This results in drastic reduction of capacitance and effective dielectric constant.

Keywords

argon compounds; capacitance; copper; integrated circuit interconnections; integrated circuit reliability; leakage currents; sealing materials; tungsten; 90 nm; 90nm node technology; ArF-Cu; TDDB characteristics; W; air-gap Cu interconnect; air-gap interconnects reliability; capacitance reduction; effective dielectric constant; leakage current; selective W sealing; Air gaps; CMOS process; CMOS technology; Capacitance; Cellular neural networks; Collision mitigation; Delay; Dielectrics; Silicon carbide; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345693

Filename

1345693